PART |
Description |
Maker |
IRU3007 IRU3007CW IRLR024 MBRB1035 HIP6019 IRL3103 |
5-BIT PROGRAMMABLE SYNCHRONOUS BUCK / NON-SYNCHRONOUS /ADJUSTABLE LDO AND 200mA ON-BOARD LDO 5-BIT PROGRAMMABLE SYNCHRONOUS BUCK, NON-SYNCHRONOUS,ADJUSTABLE LDO AND 200mA ON-BOARD LDO 5-BIT PROGRAMMABLE SYNCHRONOUS BUCK/ NON-SYNCHRONOUS/ADJUSTABLE LDO AND 200mA ON-BOARD LDO 5 Bit Prog SynchBuck CIC Non Synch Adj LDO 200mA in a 28-Pin SOIC(WB) package
|
IRF[International Rectifier]
|
HCF40161 HCF40161M013TR HCF40161B HCF40161BEY HCF4 |
SYNCHRONOUS PROGRAMMABLE 4-BIT COUNTERS SYNCHRONOUS PROGRAMMABLE 4-BIT COUNTERS SYNCHRONOUS PROGRAMMABLE 4-BIT BINARY COUNTER WITH ASYNCHRONOUS CLEAR
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
HSD16M64B8A HMD16M64B8A-10 HMD16M64B8A-10L HMD16M6 |
The HSD16M64B8A is a 16M x 64 bit Synchronous Dynamic RAM high density memory module. Synchronous DRAM Module 128Mbyte (16Mx64-Bit), SO-DIMM, 4Banks, 4K Ref., 3.3V
|
List of Unclassifed Manufacturers ETC Hanbit Electronics Co.,Ltd
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K7A203200B-QCI14 K7A203200B-QC14 K7A203600B-QCI14 |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36 512Kx16 bit Low Power Full CMOS Static RAM 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36-Bit Synchronous Pipelined Burst SRAM
|
Cypress Semiconductor, Corp. Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
MCM67J618AFN5 MCM67J618AFN7 MCM69D536TQ6R |
64K x 18 bit burstRAM synchronous fast static RAM 32K x 36 Bit Synchronous Dual I/O, Dual Address SRAM
|
Motorola
|
MH8V7245BWZTJ-6 MH8V7245BWZTJ-5 MH8S7245BWZTJ-5 MH |
HYPER PAGE MODE 603979776 - BIT ( 8388608 - WORD BY 72 - BIT ) DYNAMIC RAM 603979776-bit synchronous DRAM
|
Mitsubishi Electric Corporation
|
IS24C08-2 IS24C08-2G IS24C08-2GI IS24C08-2P IS24C0 |
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit2-WIRESERIALCMOSEEPROM 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM
|
ETC[ETC]
|
K5L5628JTM-DH18 K5L5628JBM K5L5628JBM-DH18 K5L5628 |
256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM
|
SAMSUNG[Samsung semiconductor]
|
74HC40103 74HC40103D 74HC40103DB 74HC40103N 74HC40 |
8-Bit Parallel-Load Shift Registers 16-SOIC -40 to 85 HCT SERIES, SYN POSITIVE EDGE TRIGGERED 8-BIT DOWN BINARY COUNTER, PDSO16 8-bit synchronous binary down counter 8位同步二进制计数器下
|
NXP Semiconductors N.V. ICST[Integrated Circuit Systems] PHILIPS[Philips Semiconductors]
|
MH32S72QJA-8 MH32S72QJA-7 |
2415919104-BIT ( 33554432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MH32S72APHB-7 |
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
|
Mitsubishi Electric Corporation
|